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Si6459DQVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.120 @ VGS = 10 V "2.660600.150 @ VGS = 4.5 V "2.4S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6459DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Source Voltage VGS "20TA = 25_C"2.6Continuous Drain Current (TJ = 150_C)a IDContinuous Drain Current (TJ = 150 C)a IDTA = 70_C "2.1AAAPulsed Drain Current IDM "30Continuous Source Current (Diode Conduction)a IS 1.25TA = 25_C 1.5Maximum Power Dissipationa PD WMaximum Power Dissipationa PD WTA = 70_C 1.0Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _CTHERMAL RESISTANCE RATINGSP

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