TA1759 - параметры, поиск аналогов, даташиты транзистора

TA1759 Datasheet (PDF)

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SEMICONDUCTOR KTA1759TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage.ACHGDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20MAXIMUM RATING (Ta=25)C 1.70 MAXDDD 0.45+0.15/-0.10CHARACTERISTIC SYMBOL RATING UNITKE 4.25 MAX_+F F F 1.50 0.10VCBO -400 VCollector-Base VoltageG 0.40 TYPH 1.75 MAXVC

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Spec. No. : C309N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VBTA1759N3IC -0.3AVCESAT(TYP) -0.08VDescription High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).

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Spec. No. : C309A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date : 2012.06.14 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .