TA1759 Datasheet, Equivalent, Cross Reference Search
Type Designator: TA1759
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
TA1759 Transistor Equivalent Substitute - Cross-Reference Search
TA1759 Datasheet (PDF)
kta1759.pdf
SEMICONDUCTOR KTA1759TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage.ACHGDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20MAXIMUM RATING (Ta=25)C 1.70 MAXDDD 0.45+0.15/-0.10CHARACTERISTIC SYMBOL RATING UNITKE 4.25 MAX_+F F F 1.50 0.10VCBO -400 VCollector-Base VoltageG 0.40 TYPH 1.75 MAXVC
bta1759n3.pdf
Spec. No. : C309N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VBTA1759N3IC -0.3AVCESAT(TYP) -0.08VDescription High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).
bta1759a3.pdf
Spec. No. : C309A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date : 2012.06.14 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
