Биполярный транзистор 2SC5032 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5032
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO-220E
2SC5032 Datasheet (PDF)
2sc5032.pdf
Power Transistors2SC5032Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1Full-pack package with outstanding insulatio
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5036.pdf
Power Transistors2SC5036, 2SC5036ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5034.pdf
Power Transistors2SC5034Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High collector to emitter VCEOHigh-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15 0.7 0.1Absol
2sc5037.pdf
Power Transistors2SC5037, 2SC5037ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5035.pdf
Power Transistors2SC5035Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures4.6 0.2High-speed switching9.9 0.3 2.9 0.2 3.2 0.1High collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050