2SC5032 Datasheet. Specs and Replacement
Type Designator: 2SC5032 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO-220E
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2SC5032 datasheet
Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1 Full-pack package with outstanding insulatio... See More ⇒
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf 
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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒
Detailed specifications: 2SC5009, 2SC5010, 2SC5012, 2SC5013, 2SC5014, 2SC5015, 2SC5018, 2SC5019, TIP31, 2SC5037, 2SC5037A, 2SC5041, 2SC5043, 2SC5044, 2SC5045, 2SC5046, 2SC5049
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