Справочник транзисторов. 2SA1989

 

Биполярный транзистор 2SA1989 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1989
   Маркировка: TQ_TR_TS_TT
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 2.5 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SUPER-MINI

 Аналоги (замена) для 2SA1989

 

 

2SA1989 Datasheet (PDF)

 ..1. Size:136K  isahaya
2sa1989.pdf

2SA1989
2SA1989

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.1. Size:173K  toshiba
2sa1987.pdf

2SA1989
2SA1989

 8.2. Size:173K  toshiba
2sa1986.pdf

2SA1989
2SA1989

 8.3. Size:47K  nec
2sa1988.pdf

2SA1989
2SA1989

DATA SHEETSilicon Power Transistor2SA1988PNP SILICON TRANSISTORPOWER AMPLIFIERINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SA1988 is PNP Silicon Power Transistor thatdesigned for audio frequency power amplifier.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package1 2 3ORDERING INFORMAT

 8.4. Size:244K  mcc
2sa1980-o.pdf

2SA1989
2SA1989

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

 8.5. Size:244K  mcc
2sa1980-y.pdf

2SA1989
2SA1989

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

 8.6. Size:244K  mcc
2sa1980-l.pdf

2SA1989
2SA1989

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

 8.7. Size:244K  mcc
2sa1980-g.pdf

2SA1989
2SA1989

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

 8.8. Size:42K  panasonic
2sa1982 e.pdf

2SA1989
2SA1989

Transistor2SA1982Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC53462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.0.65 max.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Mak

 8.9. Size:37K  panasonic
2sa1982.pdf

2SA1989
2SA1989

Transistor2SA1982Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC53462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.0.65 max.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Mak

 8.10. Size:282K  auk
2sa1980sf.pdf

2SA1989
2SA1989

2SA1980SFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE(sat)=-0.3V(Max.) 2 Low output capacitance : Cob=4pF(Typ.) SOT-23F Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA 2SA1980SF SOT-23F

 8.11. Size:227K  auk
2sa1980uf.pdf

2SA1989
2SA1989

2SA1980UFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features 1 Low collector saturation voltage : 2VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) SOT-323F Complementary pair with 2SC5343UF Ordering Information Type NO. Marking Package Code C 2SA1980UF SOT-323F Device Cod

 8.12. Size:237K  auk
2sa1980n.pdf

2SA1989
2SA1989

2SA1980NSemiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343N Ordering Information Type NO. Marking Package Code 2SA1980N A1980 TO-92N Outline Dimensions unit : mm 4.20~4

 8.13. Size:274K  auk
2sa1980u.pdf

2SA1989
2SA1989

2SA1980UPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : 3 VCE(sat)=-0.3V(Max.) 21 Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343U SOT-323 Ordering Information Type NO. Marking Package Code C 2SA1980U SOT-323 Dev

 8.14. Size:365K  auk
2sa1981s.pdf

2SA1989
2SA1989

2SA1981S PNP Silicon Transistor Description C Audio power amplifier application Features BC High h : h =100~320 FE FEB Complementary pair with 2SC5344S E EOrdering Information Part Number Marking Package SOT-23 EA 2SA1981S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Ab

 8.15. Size:233K  auk
2sa1980.pdf

2SA1989
2SA1989

2SA1980PNP Silicon TransistorPIN Connection Description General small signal amplifier EFeatures B Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) C Complementary pair with 2SC5343 TO-92 Ordering Information Type NO. Marking Package Code 2SA1980 A1980 TO-92Absolute Maximum Ratings (Ta=25C) C

 8.16. Size:241K  auk
2sa1980ef.pdf

2SA1989
2SA1989

2SA1980EFPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) 1 Complementary pair with 2SC5343EF 2 SOT-523F Ordering Information Type NO. Marking Package Code A 2SA1980EF SOT-523F Device C

 8.17. Size:376K  auk
2sa1980s.pdf

2SA1989
2SA1989

2SA1980S PNP Silicon Transistor Description C General small signal amplifier Features BC Low collector saturation voltage : V = 0.3V(Max.) CE(sat)B Low output capacitance : C = 4pF(Typ.) obE Complementary pair with 2SC5343S EOrdering Information SOT-23 Part Number Marking Package CA 2SA1980S SOT-23 *

 8.18. Size:225K  auk
2sa1981n.pdf

2SA1989
2SA1989

2SA1981NSemiconductor Semiconductor PNP Silicon TransistorDescription Audio power amplifier application Features High hFE : hFE=100~320 Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code 2SA1981N A1981 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55 Typ

 8.19. Size:217K  auk
2sa1980e.pdf

2SA1989
2SA1989

2SA1980EPNP Silicon TransistorPIN Connection Description General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) 1 Low output capacitance : Cob=4pF(Typ.) 2 Complementary pair with 2SC5343E SOT-523 Ordering Information Type NO. Marking Package Code A 2SA1980E SOT-523 Device Code

 8.20. Size:269K  auk
2sa1981sf.pdf

2SA1989
2SA1989

2SA1981SFPNP Silicon TransistorDescription PIN Connection Audio power amplifier application 3 Features High hFE : hFE=100~320 1 Complementary pair with 2SC5344SF 2 SOT-23F Ordering Information Type NO. Marking Package Code EA 2SA1981SF SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C

 8.21. Size:220K  auk
2sa1981.pdf

2SA1989
2SA1989

2SA1981PNP Silicon TransistorDescription PIN Connection Audio power amplifier application EBFeatures C High hFE : hFE=100~320 TO-92 Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO -35 VCollec

 8.22. Size:178K  auk
2sa1980m.pdf

2SA1989
2SA1989

2SA1980MPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343M TO-92M Ordering Information Type NO. Marking Package Code 2SA1980M 1980 TO-92M Absolute maximum ratings Ta=25C Characte

 8.23. Size:157K  savantic
2sa1988.pdf

2SA1989
2SA1989

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rati

 8.24. Size:276K  secos
2sa1980.pdf

2SA1989
2SA1989

2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) G H Complements of the 2SC5343 1 Emitter 1112 Collector 222J3 Base 333CLASSIF

 8.25. Size:77K  secos
2sa1981.pdf

2SA1989

2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1981-O 2SA1981-Y A DMillimeterRange 100~200 160~320

 8.26. Size:152K  jmnic
2sa1987.pdf

2SA1989
2SA1989

JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou

 8.27. Size:177K  jmnic
2sa1988.pdf

2SA1989
2SA1989

JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYM

 8.28. Size:207K  jmnic
2sa1986.pdf

2SA1989
2SA1989

JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 8.29. Size:182K  lge
2sa1980.pdf

2SA1989
2SA1989

2SA1980(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesLow collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 8.30. Size:1003K  kexin
2sa1980uf.pdf

2SA1989
2SA1989

SMD Type TransistorsPNP Transistors2SA1980UF Features Low collector saturation voltage Low output capacitance : Cob=4pF(Typ.) Complements to 2SC5343UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Coll

 8.31. Size:738K  kexin
2sa1981sf.pdf

2SA1989
2SA1989

SMD Type orSMD Type TransistICsPNP Transistors 2SA1981SFSOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesHigh hFE: hFE=100 to 320 Complementary pair with 2SC5344SF1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter vo

 8.32. Size:219K  inchange semiconductor
2sa1987.pdf

2SA1989
2SA1989

isc Silicon PNP Power Transistor 2SA1987DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amp

 8.33. Size:189K  inchange semiconductor
2sa1988.pdf

2SA1989
2SA1989

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1988DESCRIPTIONHigh VoltageTO-3P package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1988 is PNP silicon power transistor thatdesigned for audio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.34. Size:220K  inchange semiconductor
2sa1986.pdf

2SA1989
2SA1989

isc Silicon PNP Power Transistor 2SA1986DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamp

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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