All Transistors. 2SA1989 Datasheet

 

2SA1989 Datasheet and Replacement


   Type Designator: 2SA1989
   SMD Transistor Code: TQ_TR_TS_TT
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SUPER-MINI
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2SA1989 Datasheet (PDF)

 ..1. Size:136K  isahaya
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2SA1989

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.1. Size:173K  toshiba
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2SA1989

 8.2. Size:173K  toshiba
2sa1986.pdf pdf_icon

2SA1989

 8.3. Size:47K  nec
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2SA1989

DATA SHEETSilicon Power Transistor2SA1988PNP SILICON TRANSISTORPOWER AMPLIFIERINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SA1988 is PNP Silicon Power Transistor thatdesigned for audio frequency power amplifier.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package1 2 3ORDERING INFORMAT

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FJN3302R | 2N438 | MMBT3905 | BDW53C | DTL1642 | 2SA1995 | 3DD5G

Keywords - 2SA1989 transistor datasheet

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