2SA1989 Datasheet. Specs and Replacement

Type Designator: 2SA1989  📄📄 

SMD Transistor Code: TQ_TR_TS_TT

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SUPER-MINI

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2SA1989 datasheet

 ..1. Size:136K  isahaya

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2SA1989

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒

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2SA1989

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2SA1989

DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package 1 2 3 ORDERING INFORMAT... See More ⇒

Detailed specifications: 2SA1964, 2SA1965, 2SA1969, 2SA1973, 2SA1977, 2SA1978, 2SA1979, 2SA1982, C945, 2SA1993, 2SA2004, 2SA2005, 2SA2007, 2SA2009, 2SA2010, 2SA2011, 2SA2014

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