3DD9DT NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=10mA 250 V V(BR)CEO ICE=10mA 200 V V(BR)EBO IEB=20mA 3.0 V ICEO VCE=30V 3.0 mA VBEsat 1.8 IC=7.5A V IB=1.5A VCEsat 2.0 VCE=10V hFE 10~150 IC=7.5A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9DNPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a