3DD9D Datasheet. Specs and Replacement

Type Designator: 3DD9D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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3DD9D datasheet

 ..1. Size:153K  china

 3dd9d.pdf pdf_icon

3DD9D

3DD9D T NPN PCM TC 75 150 W ICM 15 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=10mA 250 V V(BR)CEO ICE=10mA 200 V V(BR)EBO IEB=20mA 3.0 V ICEO VCE=30V 3.0 mA VBEsat 1.8 IC=7.5A V IB=1.5A VCEsat 2.0 VCE=10V hFE 10 150 IC=7.5A ... See More ⇒

 ..2. Size:193K  inchange semiconductor

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3DD9D

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A... See More ⇒

 0.1. Size:23K  shaanxi

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3DD9D

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9D NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a... See More ⇒

Detailed specifications: 3DD7525A3, 3DD8, 3DD810, 3DD820, 3DD831, 3DD8E, 3DD9, 3DD99, BC546, 3DD9E, 3DF05, 3DF1, 3DF5, 3DG100, 3DG1009A, 3DG101, 3DG102

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