All Transistors. 3DD9D Datasheet

 

3DD9D Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD9D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

3DD9D Transistor Equivalent Substitute - Cross-Reference Search

 

3DD9D Datasheet (PDF)

1.1. d3dd9d.pdf Size:23K _upd

3DD9D

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9D NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

1.2. 3dd9d.pdf Size:153K _china

3DD9D

3DD9D—T 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤75℃ 150 W 极 ICM 15 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=10mA ≥250 V V(BR)CEO ICE=10mA ≥200 V V(BR)EBO IEB=20mA ≥3.0 V 直 ICEO VCE=30V ≤3.0 mA 流 VBEsat ≤1.8 参 IC=7.5A V 数 IB=1.5A VCEsat ≤2.0 VCE=10V hFE 10~150 IC=7.5A

Datasheet: 3DD7525A3 , 3DD8 , 3DD810 , 3DD820 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 431 , 3DD9E , 3DF05 , 3DF1 , 3DF5 , 3DG100 , 3DG1009A , 3DG101 , 3DG102 .

 


3DD9D
  3DD9D
  3DD9D
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |