B631K - описание и поиск аналогов

B631K PNP silicon APPLICATION Low Frequency Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V TO-126 1 Emitter-base voltage VEBO -5 V 1. Emitter 2.Collector 3.Base Collector current IC -1 A Power Dissipation(Ta=25 ) P

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

SEMICONDUCTOR KTB631K TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, A B MEDIUM SPEED SWITCHING APPLICATIONS D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L MAXIMUM RATING (Ta=25 ) C 0.7 _ + D 3.2 0.1 CHARACTERISTIC SYMBOL RATING UN

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto

isc Silicon PNP Power Transistor 2SB631K DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM