B631K PNP silicon APPLICATION: Low Frequency Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -120 VCollector-emitter voltageVCEO -120 VTO-1261Emitter-base voltage VEBO -5 V1. Emitter 2.Collector 3.BaseCollector currentIC -1 A Power Dissipation(Ta=25)P

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

SEMICONDUCTOR KTB631KTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP,ABMEDIUM SPEED SWITCHING APPLICATIONS DCEFEATURESFHigh breakdown voltage VCEO 120V, high current 1A.Low saturation voltage and good linearity of hFE.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LMAXIMUM RATING (Ta=25 ) C 0.7_+D 3.2 0.1CHARACTERISTIC SYMBOL RATING UN

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

isc Silicon PNP Power Transistor 2SB631KDESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM