B631K Datasheet. Specs and Replacement
Type Designator: B631K 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
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B631K datasheet
B631K PNP silicon APPLICATION Low Frequency Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V TO-126 1 Emitter-base voltage VEBO -5 V 1. Emitter 2.Collector 3.Base Collector current IC -1 A Power Dissipation(Ta=25 ) P... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to ... See More ⇒
SEMICONDUCTOR KTB631K TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, A B MEDIUM SPEED SWITCHING APPLICATIONS D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L MAXIMUM RATING (Ta=25 ) C 0.7 _ + D 3.2 0.1 CHARACTERISTIC SYMBOL RATING UN... See More ⇒
2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme... See More ⇒
Detailed specifications: 8550SS-C, 8550SS-D, 9012S, 9013S, B511, B562, B564A, B624, SS8050, B709AR, B722, B764, B772-GR, B772M, B772-O, B772-R, B772-Y
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