2SB731 Datasheet. Specs and Replacement
Type Designator: 2SB731 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO126
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2SB731 Substitution
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2SB731 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB731 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -50V(Min) CEO(SUS) Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -1A CE(sat) C DC Current Gain- h = 135-600@I = -0.1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo... See More ⇒
Detailed specifications: 2SB722, 2SB723, 2SB724, 2SB725, 2SB726, 2SB727, 2SB727K, 2SB73, BD333, 2SB733, 2SB734, 2SB736, 2SB736A, 2SB736AR, 2SB736BW1, 2SB736BW2, 2SB736BW3
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