2SB731 Specs and Replacement
Type Designator: 2SB731
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO126
2SB731 Transistor Equivalent Substitute - Cross-Reference Search
2SB731 detailed specifications
2sb731.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB731 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -50V(Min) CEO(SUS) Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -1A CE(sat) C DC Current Gain- h = 135-600@I = -0.1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo... See More ⇒
Detailed specifications: 2SB722 , 2SB723 , 2SB724 , 2SB725 , 2SB726 , 2SB727 , 2SB727K , 2SB73 , BD333 , 2SB733 , 2SB734 , 2SB736 , 2SB736A , 2SB736AR , 2SB736BW1 , 2SB736BW2 , 2SB736BW3 .
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