All Transistors. 2SB731 Equivalents Search

 

2SB731 Specs and Replacement


   Type Designator: 2SB731
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO126

 2SB731 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB731 detailed specifications

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2SB731

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2SB731

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB731 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -50V(Min) CEO(SUS) Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -1A CE(sat) C DC Current Gain- h = 135-600@I = -0.1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo... See More ⇒

 9.1. Size:166K  nec
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2SB731

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2SB731

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Detailed specifications: 2SB722 , 2SB723 , 2SB724 , 2SB725 , 2SB726 , 2SB727 , 2SB727K , 2SB73 , BD333 , 2SB733 , 2SB734 , 2SB736 , 2SB736A , 2SB736AR , 2SB736BW1 , 2SB736BW2 , 2SB736BW3 .

Keywords - 2SB731 transistor specs

 2SB731 cross reference
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