2SB876 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB876
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO126
2SB876 Transistor Equivalent Substitute - Cross-Reference Search
2SB876 Datasheet (PDF)
2sb873 e.pdf
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb873.pdf
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb870.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sb871.pdf
isc Silicon PNP Power Transistor 2SB871DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation Voltage: V = -0.6V(Max)@I = -10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
2sb870.pdf
isc Silicon PNP Power Transistor 2SB870DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sb874.pdf
isc Silicon PNP Power Transistor 2SB874DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage: V = -1.0V(Max)@I = -1.5ACE(sat) CComplement to Type 2SD1177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
