2SB897 Datasheet. Specs and Replacement

Type Designator: 2SB897  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO126

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2SB897 datasheet

 ..1. Size:216K  inchange semiconductor

2sb897.pdf pdf_icon

2SB897

isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -10A FE C Low Collector Saturation Voltage- V = -1.5V(Max.) @I = 10A CE(sat) C Complement to Type 2SD1210 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high ... See More ⇒

 9.1. Size:86K  1

2sb895 2sb895a.pdf pdf_icon

2SB897

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2sb894.pdf pdf_icon

2SB897

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 9.3. Size:77K  sanyo

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2SB897

Ordering number 1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit mm 2003A Features [2SB893] Low saturation voltage VCE(sat) 0.45V (IC= 1.5A, IB= 0.15A). Large current capacity and wide ASO IC max= 2.5A. JEDEC TO-92 B Base ... See More ⇒

Detailed specifications: 2SB893D, 2SB893E, 2SB893G, 2SB894, 2SB895, 2SB895A, 2SB896, 2SB896A, 2N5551, 2SB898, 2SB899, 2SB89A, 2SB89AH, 2SB89H, 2SB90, 2SB900, 2SB901

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