All Transistors. 2SB897 Datasheet

 

2SB897 Datasheet and Replacement


   Type Designator: 2SB897
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO126
 

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2SB897 Datasheet (PDF)

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2SB897

isc Silicon PNP Darlington Power Transistor 2SB897DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CLow Collector Saturation Voltage-: V = -1.5V(Max.) @I = 10ACE(sat) CComplement to Type 2SD1210Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high

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2SB897

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2SB897

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2SB897

Ordering number:1023CPNP Epitaxial Planar Silicon Transistor2SB893Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit:mm2003AFeatures [2SB893] Low saturation voltage : VCE(sat)0.45V (IC=1.5A, IB=0.15A). Large current capacity and wide ASO : IC max=2.5A.JEDEC : TO-92 B : Base

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 2SB897 transistor datasheet

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