2SD1466 Datasheet and Replacement
Type Designator: 2SD1466
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO218
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2SD1466 Datasheet (PDF)
2sd1466.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 8ACE(sat) CHigh DC Current Gain: h = 200(Min) @ I = 15A, V = 3VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance
2sd1468.pdf

2SD1834TransistorsTransistors2SD1468S / 2SD1865(94S-340-D64)(94L-767-D65)311Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for re
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | PN4143
Keywords - 2SD1466 transistor datasheet
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History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | PN4143



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