All Transistors. 2SD1466 Datasheet

 

2SD1466 Datasheet and Replacement


   Type Designator: 2SD1466
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO218
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2SD1466 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
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2SD1466

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 8ACE(sat) CHigh DC Current Gain: h = 200(Min) @ I = 15A, V = 3VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

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2SD1466

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2SD1466

 8.3. Size:47K  rohm
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2SD1466

2SD1834TransistorsTransistors2SD1468S / 2SD1865(94S-340-D64)(94L-767-D65)311Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for re

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | PN4143

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