2SD1466 Datasheet. Specs and Replacement

Type Designator: 2SD1466  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO218

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2SD1466 datasheet

 ..1. Size:206K  inchange semiconductor

2sd1466.pdf pdf_icon

2SD1466

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 8A CE(sat) C High DC Current Gain h = 200(Min) @ I = 15A, V = 3V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance... See More ⇒

 8.2. Size:269K  1

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2SD1466

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 8.3. Size:47K  rohm

2sd1468.pdf pdf_icon

2SD1466

2SD1834 Transistors Transistors 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for re... See More ⇒

Detailed specifications: 2SD1460, 2SD1461, 2SD1462, 2SD1463, 2SD1464, 2SD1465, 2SD1465L, 2SD1465S, TIP42, 2SD1468, 2SD1469, 2SD146F, 2SD147, 2SD1470, 2SD1471, 2SD1472, 2SD1473

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