2SD430 Datasheet. Specs and Replacement

Type Designator: 2SD430  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

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2SD430 datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD437 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching regulator applications. ABSOLUTE MAXI... See More ⇒

Detailed specifications: 2SD424, 2SD425, 2SD426, 2SD427, 2SD427S, 2SD428, 2SD429, 2SD43, S8550, 2SD431, 2SD432, 2SD433, 2SD434, 2SD435, 2SD436, 2SD437, 2SD437W

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