All Transistors. 2SD649 Datasheet

 

2SD649 Datasheet and Replacement


   Type Designator: 2SD649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO3
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2SD649 Datasheet (PDF)

 ..1. Size:221K  inchange semiconductor
 2sd649.pdf pdf_icon

2SD649

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V

 9.1. Size:102K  toshiba
 2sd647 2sd697.pdf pdf_icon

2SD649

 9.2. Size:98K  toshiba
 2sd648.pdf pdf_icon

2SD649

 9.3. Size:92K  toshiba
 2sd641.pdf pdf_icon

2SD649

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Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC1940 | DDTC114TKA | 2SB1325 | CSC1398R | 2SB1296 | DMA204A0 | DDTC143FE

Keywords - 2SD649 transistor datasheet

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