2SD649 Datasheet. Specs and Replacement

Type Designator: 2SD649  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO3

  📄📄 Copy 

 2SD649 Substitution

- BJT ⓘ Cross-Reference Search

 

2SD649 datasheet

 ..1. Size:221K  inchange semiconductor

 2sd649.pdf pdf_icon

2SD649

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V... See More ⇒

 9.1. Size:102K  toshiba

 2sd647 2sd697.pdf pdf_icon

2SD649

... See More ⇒

 9.2. Size:98K  toshiba

 2sd648.pdf pdf_icon

2SD649

... See More ⇒

 9.3. Size:92K  toshiba

 2sd641.pdf pdf_icon

2SD649

... See More ⇒

SHOW MORE

Detailed specifications: 2SD644, 2SD645, 2SD646, 2SD646A, 2SD647, 2SD647A, 2SD648, 2SD648A, B772, 2SD65, 2SD650, 2SD650H, 2SD651, 2SD652, 2SD654, 2SD655, 2SD656

Keywords - 2SD649 pdf specs

 2SD649 cross reference

 2SD649 equivalent finder

 2SD649 pdf lookup

 2SD649 substitution

 2SD649 replacement