All Transistors. 3N109 Datasheet

 

3N109 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3N109
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 12 MHz
   Noise Figure, dB: -
   Package: TO72

 3N109 Transistor Equivalent Substitute - Cross-Reference Search

   

3N109 Datasheet (PDF)

 0.1. Size:369K  fairchild semi
 fdfma3n109.pdf

3N109 3N109

July 2014FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 Vsolution for a boost topology in cellular handset and RDS(ON) = 140 m @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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