All Transistors. 3N109 Datasheet

 

3N109 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3N109

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 12 MHz

Noise Figure, dB: -

Package: TO72

3N109 Transistor Equivalent Substitute - Cross-Reference Search

 

3N109 Datasheet (PDF)

1.1. fdfma3n109.pdf Size:369K _upd-mosfet

3N109
3N109

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 mΩ @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 mΩ

1.2. fdfma3n109.pdf Size:393K _fairchild_semi

3N109
3N109

April 2008 FDFMA3N109 tm Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m? @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m? @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m? @ VGS

 

Datasheet: 3N101 , 3N102 , 3N103 , 3N104 , 3N105 , 3N106 , 3N107 , 3N108 , BC548B , 3N110 , 3N111 , 3N112 , 3N113 , 3N114 , 3N115 , 3N116 , 3N117 .

 
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