3N109 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3N109
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 12 MHz
Noise Figure, dB: -
Package: TO72
3N109 Transistor Equivalent Substitute - Cross-Reference Search
3N109 Datasheet (PDF)
1.1. fdfma3n109.pdf 
Size:369K _upd-mosfet
July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 mΩ @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 mΩ
1.2. fdfma3n109.pdf Size:393K _fairchild_semi
April 2008 FDFMA3N109 tm Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m? @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m? @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m? @ VGS
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
