All Transistors. 3N109 Datasheet

 

3N109 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3N109

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 12 MHz

Noise Figure, dB: -

Package: TO72

3N109 Transistor Equivalent Substitute - Cross-Reference Search

 

3N109 Datasheet (PDF)

1.1. fdfma3n109.pdf Size:369K _upd-mosfet

3N109
3N109

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 mΩ @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 mΩ

1.2. fdfma3n109.pdf Size:393K _fairchild_semi

3N109
3N109

April 2008 FDFMA3N109 tm Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m? @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m? @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m? @ VGS

 

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
Back to Top

 


3N109
  3N109
  3N109
  3N109
 

social 

LIST

Last Update

BJT: MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 | 3DD209L | XP6111 | STC8050N | CHT847BWPT | 3DD4204D | 2SC6092LS | 2SC5966 | 2SA1897 | KRC664E | KRC663E | SMUN5335DW |

 

 

 
Back to Top