3N109 Datasheet. Specs and Replacement

Type Designator: 3N109  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Noise Figure, dB: -

Package: TO72

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3N109 datasheet

 0.1. Size:369K  fairchild semi

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3N109

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m ... See More ⇒

Detailed specifications: 3N101, 3N102, 3N103, 3N104, 3N105, 3N106, 3N107, 3N108, D880, 3N110, 3N111, 3N112, 3N113, 3N114, 3N115, 3N116, 3N117

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