AM80610-030 Datasheet. Specs and Replacement

Type Designator: AM80610-030  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SO42

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AM80610-030 datasheet

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AM80610-030

AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .INPUT/OUTPUT MATCHING .METAL/CERAMIC HERMETIC PACKAGE .P 30 W MIN. WITH 8.5 dB GAIN OUT = .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING AM80610-030 80610-30 DESCRIPTION PIN CONNECTION The AM80610-030 is a high power, common base NPN ... See More ⇒

Detailed specifications: AM1416-200, AM1517-012, AM1517-025, AM2729-110, AM2729-125, AM2931-110, AM2931-125, AM80610-018, 8050, AM80814-005, AM80814-025, AM80912-005, AM80912-015, AM80912-030, AM80912-085, AM81214-006, AM81214-015

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