All Transistors. AM80610-030 Datasheet

 

AM80610-030 Datasheet and Replacement


   Type Designator: AM80610-030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SO42
 

 AM80610-030 Substitution

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AM80610-030 Datasheet (PDF)

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AM80610-030

AM80610-030RF & MICROWAVE TRANSISTORSUHF COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.INPUT/OUTPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 8.5 dB GAINOUT =.400 x .400 2NLFL (S042)hermetically sealedORDER CODEBRANDINGAM80610-03080610-30DESCRIPTIONPIN CONNECTIONThe AM80610-030 is a high power, commonbase NPN

Datasheet: AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , AM2729-125 , AM2931-110 , AM2931-125 , AM80610-018 , TIP31 , AM80814-005 , AM80814-025 , AM80912-005 , AM80912-015 , AM80912-030 , AM80912-085 , AM81214-006 , AM81214-015 .

History: 2N5615 | LBC557A | CSB834O | NPS3250A

Keywords - AM80610-030 transistor datasheet

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