All Transistors. AM80610-030 Datasheet

 

AM80610-030 Datasheet and Replacement


   Type Designator: AM80610-030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SO42
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AM80610-030 Datasheet (PDF)

 4.1. Size:44K  st
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AM80610-030

AM80610-030RF & MICROWAVE TRANSISTORSUHF COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.INPUT/OUTPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 8.5 dB GAINOUT =.400 x .400 2NLFL (S042)hermetically sealedORDER CODEBRANDINGAM80610-03080610-30DESCRIPTIONPIN CONNECTIONThe AM80610-030 is a high power, commonbase NPN

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1416R | 2N4903 | RN1606 | 2N5254 | DTL1642 | 850AT | 3DD5G

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