AM80814-005 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM80814-005
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 48 V
Maximum Collector-Emitter Voltage |Vce|: 48 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1400 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SO64
AM80814-005 Transistor Equivalent Substitute - Cross-Reference Search
AM80814-005 Datasheet (PDF)
am808-14.pdf
AM80814-025RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 25 W MIN. WITH 7.0 dB GAINOUT = .400 x .400 2LFL (S036)hermetically sealedORDER CODE BRANDINGAM80814-025 80814-25PIN CONNECTIONDESCRIPTION
am808-1405.pdf
AM80814-005RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.P 5.0 W MIN. WITH 8.5 dB GAINOUT =ORDER CODE BRANDINGAM80814-005 80814-5PIN CONNECTIONDESCRI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
