AM80814-005 Datasheet. Specs and Replacement
Type Designator: AM80814-005 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 48 V
Maximum Collector-Emitter Voltage |Vce|: 48 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1400 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SO64
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AM80814-005 datasheet
AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 25 W MIN. WITH 7.0 dB GAIN OUT = .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM80814-025 80814-25 PIN CONNECTION DESCRIPTION... See More ⇒
AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .310 x .310 2LFL (S064) hermetically sealed .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = ORDER CODE BRANDING AM80814-005 80814-5 PIN CONNECTION DESCRI... See More ⇒
Detailed specifications: AM1517-012, AM1517-025, AM2729-110, AM2729-125, AM2931-110, AM2931-125, AM80610-018, AM80610-030, BC558, AM80814-025, AM80912-005, AM80912-015, AM80912-030, AM80912-085, AM81214-006, AM81214-015, AM81214-030
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BJT Parameters and How They Relate
History: ME4001
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