AM81720-012 Datasheet. Specs and Replacement
Type Designator: AM81720-012 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: SO38
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AM81720-012 Substitution
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AM81720-012 datasheet
AM81720-012 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGIZED VSWR 1 .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036) hermetically sealed .P 12 W MIN. WITH 7.4 dB GAIN OUT = ORDER CODE BRANDING AM81720-012 81720-12 PIN CONNECTION DE... See More ⇒
AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 40 W MIN. WITH 7 dB GAIN OUT = .400 X .400 2 LFL (M228) hermetically sealed ORDER CODE BRANDING AM81719-040 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a hig... See More ⇒
AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 SQ 2LFL (M147) .P 28 W MIN. WITH 6.7 dB GAIN = OUT hermetically sealed ORDER CODE BRANDING AM81719-030 81719-030 PIN CONNECTION DESCRIPTION Th... See More ⇒
Detailed specifications: AM80912-085, AM81214-006, AM81214-015, AM81214-030, AM81214-060, AM81416-020, AM81719-030, AM81719-040, 2SB817, AM82223-010, AM82325-040, AM82325-050, AM82731-003, AM82731-006, AM82731-012, AM82731-025, AM82731-050
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