All Transistors. AM82223-010 Datasheet

 

AM82223-010 Datasheet and Replacement


   Type Designator: AM82223-010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 9 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SO42
 

 AM82223-010 Substitution

   - BJT ⓘ Cross-Reference Search

   

AM82223-010 Datasheet (PDF)

 7.1. Size:59K  st
 am82223.pdf pdf_icon

AM82223-010

AM82223-010RF & MICROWAVE TRANSISTORSTELEMETRY APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY AT RATEDCONDITIONS.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2NLFL (S042).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 9 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM82223-010 82223-10

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N1644 | IDD1414

Keywords - AM82223-010 transistor datasheet

 AM82223-010 cross reference
 AM82223-010 equivalent finder
 AM82223-010 lookup
 AM82223-010 substitution
 AM82223-010 replacement

 

 
Back to Top

 


 
.