AM82223-010 Datasheet. Specs and Replacement

Type Designator: AM82223-010  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 9 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2300 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SO42

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AM82223-010 datasheet

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AM82223-010

AM82223-010 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED . 1 VSWR CAPABILITY AT RATED CONDITIONS .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .400 2NLFL (S042) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 9 W MIN. WITH 6.5 dB GAIN OUT = ORDER CODE BRANDING AM82223-010 82223-10 ... See More ⇒

Detailed specifications: AM81214-006, AM81214-015, AM81214-030, AM81214-060, AM81416-020, AM81719-030, AM81719-040, AM81720-012, S9013, AM82325-040, AM82325-050, AM82731-003, AM82731-006, AM82731-012, AM82731-025, AM82731-050, AM83135-001

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