All Transistors. AM82223-010 Datasheet

 

AM82223-010 Datasheet, Equivalent, Cross Reference Search


   Type Designator: AM82223-010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 9 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SO42

 AM82223-010 Transistor Equivalent Substitute - Cross-Reference Search

   

AM82223-010 Datasheet (PDF)

 7.1. Size:59K  st
 am82223.pdf

AM82223-010 AM82223-010

AM82223-010RF & MICROWAVE TRANSISTORSTELEMETRY APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY AT RATEDCONDITIONS.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2NLFL (S042).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 9 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM82223-010 82223-10

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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