All Transistors. AM82223-010 Datasheet

 

AM82223-010 Datasheet and Replacement


   Type Designator: AM82223-010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 9 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SO42
 

 AM82223-010 Substitution

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AM82223-010 Datasheet (PDF)

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AM82223-010

AM82223-010RF & MICROWAVE TRANSISTORSTELEMETRY APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY AT RATEDCONDITIONS.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2NLFL (S042).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 9 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM82223-010 82223-10

Datasheet: AM81214-006 , AM81214-015 , AM81214-030 , AM81214-060 , AM81416-020 , AM81719-030 , AM81719-040 , AM81720-012 , 2SB817 , AM82325-040 , AM82325-050 , AM82731-003 , AM82731-006 , AM82731-012 , AM82731-025 , AM82731-050 , AM83135-001 .

Keywords - AM82223-010 transistor datasheet

 AM82223-010 cross reference
 AM82223-010 equivalent finder
 AM82223-010 lookup
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 AM82223-010 replacement

 

 
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