BC875 Datasheet and Replacement
Type Designator: BC875
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO92
BC875 Substitution
BC875 Datasheet (PDF)
bc875 bc879 4.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC875; BC879NPN Darlington transistors1999 May 28Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BC875; BC879FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)
Datasheet: BC860BWT1 , BC860C , BC860CLT1 , BC860CR , BC860CW , BC860CWT1 , BC868 , BC869 , 2SC2383Y , BC876 , BC877 , BC878 , BC879 , BC880 , BCAP07 , BCAP07A , BCAP07B .
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