BC875 Datasheet. Specs and Replacement
Type Designator: BC875 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO92
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BC875 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors 1999 May 28 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING High DC current gain (min. 1000) PIN DESCRIPTION High current (max. 1 A) 1 base Low voltage (max. 80 V) ... See More ⇒
Detailed specifications: BC860BWT1, BC860C, BC860CLT1, BC860CR, BC860CW, BC860CWT1, BC868, BC869, 2SC5198, BC876, BC877, BC878, BC879, BC880, BCAP07, BCAP07A, BCAP07B
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