BC875 Specs and Replacement
Type Designator: BC875
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO92
BC875 Substitution
BC875 detailed specifications
..1. Size:50K philips
bc875 bc879 4.pdf
bc875 bc879 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors 1999 May 28 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING High DC current gain (min. 1000) PIN DESCRIPTION High current (max. 1 A) 1 base Low voltage (max. 80 V) ... See More ⇒
Detailed specifications: BC860BWT1 , BC860C , BC860CLT1 , BC860CR , BC860CW , BC860CWT1 , BC868 , BC869 , 2SC5198 , BC876 , BC877 , BC878 , BC879 , BC880 , BCAP07 , BCAP07A , BCAP07B .
Keywords - BC875 transistor specs
BC875 cross reference
BC875 equivalent finder
BC875 lookup
BC875 substitution
BC875 replacement
