All Transistors. BD141 Datasheet

 

BD141 Datasheet and Replacement


   Type Designator: BD141
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BD141 Datasheet (PDF)

 ..1. Size:195K  inchange semiconductor
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BD141

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD141DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 4ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for

Datasheet: BD139-16 , BD139-6 , BD139G , BD140 , BD140-10 , BD140-16 , BD140-6 , BD140G , 2SD718 , BD142 , BD142-4 , BD142-5 , BD142-6 , BD142-7 , BD144 , BD145 , BD148 .

History: 2N1636 | BD815A | ECG284 | BD463 | HA92 | 2SC3564 | 2SC1065

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