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BD141 Specs and Replacement


   Type Designator: BD141
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

 BD141 Substitution

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BD141 detailed specifications

 ..1. Size:195K  inchange semiconductor
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BD141

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD141 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 4A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for ... See More ⇒

Detailed specifications: BD139-16 , BD139-6 , BD139G , BD140 , BD140-10 , BD140-16 , BD140-6 , BD140G , BD140 , BD142 , BD142-4 , BD142-5 , BD142-6 , BD142-7 , BD144 , BD145 , BD148 .

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