BD141 Datasheet. Specs and Replacement

Type Designator: BD141  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BD141 datasheet

 ..1. Size:195K  inchange semiconductor

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BD141

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD141 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 4A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for ... See More ⇒

Detailed specifications: BD139-16, BD139-6, BD139G, BD140, BD140-10, BD140-16, BD140-6, BD140G, D882, BD142, BD142-4, BD142-5, BD142-6, BD142-7, BD144, BD145, BD148

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