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BD501B Specs and Replacement


   Type Designator: BD501B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 85 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
 

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BD501B detailed specifications

 ..1. Size:191K  inchange semiconductor
 bd501 bd501b.pdf pdf_icon

BD501B

isc Silicon NPN Power Transistors BD501/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) 80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

 9.1. Size:105K  inchange semiconductor
 bd501 b.pdf pdf_icon

BD501B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 50V(Min) 80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA... See More ⇒

Detailed specifications: BD477B , BD487 , BD488 , BD500 , BD500A , BD500B , BD501 , BD501A , A1941 , BD505 , BD505-1 , BD505-5 , BD506 , BD506-1 , BD506-5 , BD507 , BD507-1 .

History: TIPP112 | BD505-5

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