BD550B Datasheet, Equivalent, Cross Reference Search
Type Designator: BD550B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 275 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BD550B Transistor Equivalent Substitute - Cross-Reference Search
BD550B Datasheet (PDF)
bd550b.pdf
isc Silicon NPN Power Transistors BD550BDESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bd550.pdf
isc Silicon NPN Power Transistors BD550DESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
Datasheet: BD545D , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , BD550A , B772 , BD561 , BD562 , BD566 , BD566A , BD567 , BD567A , BD575 , BD576 .
