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BD550B PDF Specs and Replacement


   Type Designator: BD550B
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 275 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BD550B PDF detailed specifications

 ..1. Size:182K  inchange semiconductor
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BD550B

isc Silicon NPN Power Transistors BD550B DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 9.1. Size:183K  inchange semiconductor
 bd550.pdf pdf_icon

BD550B

isc Silicon NPN Power Transistors BD550 DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

Detailed specifications: BD545D , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , BD550A , 2SA1837 , BD561 , BD562 , BD566 , BD566A , BD567 , BD567A , BD575 , BD576 .

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