All Transistors. BD550B Datasheet

 

BD550B Datasheet and Replacement


   Type Designator: BD550B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 275 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BD550B Datasheet (PDF)

 ..1. Size:182K  inchange semiconductor
 bd550b.pdf pdf_icon

BD550B

isc Silicon NPN Power Transistors BD550BDESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.1. Size:183K  inchange semiconductor
 bd550.pdf pdf_icon

BD550B

isc Silicon NPN Power Transistors BD550DESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: BD545D , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , BD550A , BC546 , BD561 , BD562 , BD566 , BD566A , BD567 , BD567A , BD575 , BD576 .

History: BF22O | BCM857DS | BF226 | NSVMUN5131T1G | BU724AS | AFY61 | UN1110R

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