BD550B Datasheet. Specs and Replacement

Type Designator: BD550B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 275 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BD550B datasheet

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BD550B

isc Silicon NPN Power Transistors BD550B DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 9.1. Size:183K  inchange semiconductor

 bd550.pdf pdf_icon

BD550B

isc Silicon NPN Power Transistors BD550 DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

Detailed specifications: BD545D, BD546, BD546A, BD546B, BD546C, BD546D, BD550, BD550A, 2SA1837, BD561, BD562, BD566, BD566A, BD567, BD567A, BD575, BD576

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