All Transistors. BD582 Datasheet

 

BD582 Datasheet and Replacement


   Type Designator: BD582
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
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BD582 Datasheet (PDF)

 ..1. Size:240K  inchange semiconductor
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BD582

INCHANGE Semiconductorisc Silicon PNP Power Transistors BD582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOComplement to Type BD581Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: SK1639 | 109T2 | 40974 | 2SC1623-MS | BD141 | HC4242 | MT6L03AE

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