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BD582 PDF Specs and Replacement


   Type Designator: BD582
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
 

 BD582 Substitution

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BD582 PDF detailed specifications

 ..1. Size:240K  inchange semiconductor
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BD582

INCHANGE Semiconductor isc Silicon PNP Power Transistors BD582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Complement to Type BD581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

Detailed specifications: BD567A , BD575 , BD576 , BD577 , BD578 , BD579 , BD580 , BD581 , TIP42 , BD585 , BD586 , BD587 , BD588 , BD589 , BD590 , BD591 , BD592 .

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