BD582 Datasheet. Specs and Replacement

Type Designator: BD582  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

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BD582 datasheet

 ..1. Size:240K  inchange semiconductor

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BD582

INCHANGE Semiconductor isc Silicon PNP Power Transistors BD582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Complement to Type BD581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

Detailed specifications: BD567A, BD575, BD576, BD577, BD578, BD579, BD580, BD581, TIP42, BD585, BD586, BD587, BD588, BD589, BD590, BD591, BD592

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