All Transistors. BD609 Datasheet

 

BD609 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD609
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BD609 Transistor Equivalent Substitute - Cross-Reference Search

   

BD609 Datasheet (PDF)

 ..1. Size:201K  inchange semiconductor
 bd609.pdf

BD609 BD609

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD609DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD610100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary cir

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PN901 | 2N789 | PN2222ATF

 

 
Back to Top