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BD609 Specs and Replacement


   Type Designator: BD609
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BD609 Transistor Equivalent Substitute - Cross-Reference Search

   

BD609 detailed specifications

 ..1. Size:201K  inchange semiconductor
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BD609

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD609 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Complement to Type BD610 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary cir... See More ⇒

Detailed specifications: BD599 , BD600 , BD601 , BD602 , BD605 , BD606 , BD607 , BD608 , BC639 , BD610 , BD611 , BD612 , BD613 , BD614 , BD615 , BD616 , BD617 .

History: T10N60GP

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