All Transistors. BD609 Datasheet

 

BD609 Datasheet and Replacement


   Type Designator: BD609
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
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BD609 Datasheet (PDF)

 ..1. Size:201K  inchange semiconductor
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BD609

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD609DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD610100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary cir

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3180 | NSVBC849BLT1G | RN2709JE | 2N1151 | UN5217R | KRA564F | CMST5087

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