BD609 Datasheet. Specs and Replacement

Type Designator: BD609  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

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BD609 datasheet

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BD609

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD609 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Complement to Type BD610 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary cir... See More ⇒

Detailed specifications: BD599, BD600, BD601, BD602, BD605, BD606, BD607, BD608, BC639, BD610, BD611, BD612, BD613, BD614, BD615, BD616, BD617

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