All Transistors. BD633 Datasheet

 

BD633 Datasheet and Replacement


   Type Designator: BD633
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 185 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
 

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BD633 Datasheet (PDF)

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BD633

isc Silicon NPN Power Transistor BD633DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 45V(Min.)(BR)CEOComplement to Type BD634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: BD613 , BD614 , BD615 , BD616 , BD617 , BD618 , BD619 , BD620 , TIP36C , BD634 , BD635 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 .

History: KTC3660U | 2SC1431-2 | 2SC1379 | MP503 | RN1106CT | 2SD2115S

Keywords - BD633 transistor datasheet

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