BD633 Datasheet. Specs and Replacement

Type Designator: BD633  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 185 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO220

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BD633 datasheet

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BD633

isc Silicon NPN Power Transistor BD633 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 25mA FE C Collector-Emitter Breakdown Voltage- V = 45V(Min.) (BR)CEO Complement to Type BD634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BD613, BD614, BD615, BD616, BD617, BD618, BD619, BD620, D882P, BD634, BD635, BD636, BD637, BD638, BD643, BD643F, BD644

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