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BD633 Specs and Replacement


   Type Designator: BD633
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 185 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220

 BD633 Transistor Equivalent Substitute - Cross-Reference Search

   

BD633 detailed specifications

 ..1. Size:188K  inchange semiconductor
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BD633

isc Silicon NPN Power Transistor BD633 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 25mA FE C Collector-Emitter Breakdown Voltage- V = 45V(Min.) (BR)CEO Complement to Type BD634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BD613 , BD614 , BD615 , BD616 , BD617 , BD618 , BD619 , BD620 , D882P , BD634 , BD635 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 .

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