BD633 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD633
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 185 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
BD633 Transistor Equivalent Substitute - Cross-Reference Search
BD633 Datasheet (PDF)
bd633.pdf
isc Silicon NPN Power Transistor BD633DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 45V(Min.)(BR)CEOComplement to Type BD634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6771 | 3CK010 | 2SD2201 | BD516
History: 2N6771 | 3CK010 | 2SD2201 | BD516
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