BD635 Specs and Replacement
Type Designator: BD635
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 186 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
BD635 Transistor Equivalent Substitute - Cross-Reference Search
BD635 detailed specifications
bd635.pdf
isc Silicon NPN Power Transistor BD635 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 25mA FE C Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type BD636 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: BD615 , BD616 , BD617 , BD618 , BD619 , BD620 , BD633 , BD634 , TIP120 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 , BD644F , BD645 .
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