BD635 Datasheet. Specs and Replacement
Type Designator: BD635 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 186 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
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BD635 Substitution
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BD635 datasheet
isc Silicon NPN Power Transistor BD635 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 25mA FE C Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type BD636 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: BD615, BD616, BD617, BD618, BD619, BD620, BD633, BD634, TIP120, BD636, BD637, BD638, BD643, BD643F, BD644, BD644F, BD645
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