All Transistors. BD635 Datasheet

 

BD635 Datasheet and Replacement


   Type Designator: BD635
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 186 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
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BD635 Datasheet (PDF)

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BD635

isc Silicon NPN Power Transistor BD635DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type BD636Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MRF2001B

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