All Transistors. BD635 Datasheet

 

BD635 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD635
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 186 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220

 BD635 Transistor Equivalent Substitute - Cross-Reference Search

   

BD635 Datasheet (PDF)

 ..1. Size:188K  inchange semiconductor
bd635.pdf

BD635
BD635

isc Silicon NPN Power Transistor BD635DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type BD636Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2259 | 2N3714SM

 

 
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