All Transistors. BD635 Datasheet

 

BD635 Datasheet and Replacement


   Type Designator: BD635
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 186 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
 

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BD635 Datasheet (PDF)

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BD635

isc Silicon NPN Power Transistor BD635DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type BD636Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: BD615 , BD616 , BD617 , BD618 , BD619 , BD620 , BD633 , BD634 , MPSA42 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 , BD644F , BD645 .

History: SC258VI | 2SC1029 | 2SB411S | FMMT3742 | INC6005AC1 | 2SA1838 | NS1672

Keywords - BD635 transistor datasheet

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