BD636 Datasheet. Specs and Replacement
Type Designator: BD636 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 185 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
📄📄 Copy
BD636 Substitution
- BJT ⓘ Cross-Reference Search
BD636 datasheet
isc Silicon PNP Power Transistor BD636 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -25mA FE C Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Complement to Type BD635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
Detailed specifications: BD616, BD617, BD618, BD619, BD620, BD633, BD634, BD635, B647, BD637, BD638, BD643, BD643F, BD644, BD644F, BD645, BD645F
Keywords - BD636 pdf specs
BD636 cross reference
BD636 equivalent finder
BD636 pdf lookup
BD636 substitution
BD636 replacement
