All Transistors. BD636 Datasheet

 

BD636 Datasheet and Replacement


   Type Designator: BD636
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 185 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
 

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BD636 Datasheet (PDF)

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BD636

isc Silicon PNP Power Transistor BD636DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -25mAFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOComplement to Type BD635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: BD616 , BD617 , BD618 , BD619 , BD620 , BD633 , BD634 , BD635 , 2SD882 , BD637 , BD638 , BD643 , BD643F , BD644 , BD644F , BD645 , BD645F .

History: CHUMF23GP | GFT31 | GFT22R | 2SB266 | 2SC3969 | BD746B | 2SB265

Keywords - BD636 transistor datasheet

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