BD636 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD636
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 185 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
BD636 Transistor Equivalent Substitute - Cross-Reference Search
BD636 Datasheet (PDF)
bd636.pdf
isc Silicon PNP Power Transistor BD636DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -25mAFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOComplement to Type BD635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BD501A | BF214B | 2SD232A | FMBM5551 | 2SC3631
History: BD501A | BF214B | 2SD232A | FMBM5551 | 2SC3631
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050