All Transistors. BD637 Datasheet

 

BD637 Datasheet and Replacement


   Type Designator: BD637
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 185 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
 
   - BJT ⓘ Cross-Reference Search

   

BD637 Datasheet (PDF)

 ..1. Size:189K  inchange semiconductor
 bd637.pdf pdf_icon

BD637

isc Silicon NPN Power Transistor BD637DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 25mAFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min.)(BR)CEOComplement to Type BD638Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: BD617 , BD618 , BD619 , BD620 , BD633 , BD634 , BD635 , BD636 , 2N2907 , BD638 , BD643 , BD643F , BD644 , BD644F , BD645 , BD645F , BD646 .

Keywords - BD637 transistor datasheet

 BD637 cross reference
 BD637 equivalent finder
 BD637 lookup
 BD637 substitution
 BD637 replacement

 

 
Back to Top

 


 
.