BD637 Datasheet. Specs and Replacement

Type Designator: BD637  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 185 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO220

  📄📄 Copy 

 BD637 Substitution

- BJT ⓘ Cross-Reference Search

 

BD637 datasheet

 ..1. Size:189K  inchange semiconductor

 bd637.pdf pdf_icon

BD637

isc Silicon NPN Power Transistor BD637 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 25mA FE C Collector-Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO Complement to Type BD638 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BD617, BD618, BD619, BD620, BD633, BD634, BD635, BD636, A42, BD638, BD643, BD643F, BD644, BD644F, BD645, BD645F, BD646

Keywords - BD637 pdf specs

 BD637 cross reference

 BD637 equivalent finder

 BD637 pdf lookup

 BD637 substitution

 BD637 replacement