BD638 Datasheet. Specs and Replacement

Type Designator: BD638  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 185 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO220

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BD638 datasheet

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BD638

isc Silicon PNP Power Transistor BD638 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -25mA FE C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type BD637 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒

Detailed specifications: BD618, BD619, BD620, BD633, BD634, BD635, BD636, BD637, D667, BD643, BD643F, BD644, BD644F, BD645, BD645F, BD646, BD646F

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