BD829 Specs and Replacement
Type Designator: BD829
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD829 Substitution
BD829 datasheet
bd825 bd829.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification 1998 May 29 Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 ... See More ⇒
bd829.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD829 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒
Detailed specifications: BD827B , BD828 , BD828-10 , BD828-16 , BD828-25 , BD828-6 , BD828A , BD828B , TIP32C , BD829-10 , BD829-16 , BD829-25 , BD829-6 , BD829A , BD829B , BD830 , BD830-10 .
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Keywords - BD829 pdf specs
BD829 cross reference
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