BDS20SM Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS20SM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO252
BDS20SM Transistor Equivalent Substitute - Cross-Reference Search
BDS20SM Datasheet (PDF)
bds20smd.pdf
SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 80V VCEO Collector Emitter Voltage 80V VE
Datasheet: BDS16SM , BDS17 , BDS17SM , BDS18 , BDS18SM , BDS19 , BDS19SM , BDS20 , SS8050 , BDS21 , BDS21SM , BDS28A , BDS28ASM , BDS28B , BDS28BSM , BDS28C , BDS28CSM .