BDX16 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX16
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
BDX16 Transistor Equivalent Substitute - Cross-Reference Search
BDX16 Datasheet (PDF)
bdx16.pdf
isc Silicon PNP Power Transistor BDX16DESCRIPTIONContunuous Collector Current-I = -3ACCollector Power Dissipation-: P = 25W @T = 25C CCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose switching and linearamplifier appl
bdx16a.pdf
BDX16AAMECHANICAL DATADimensions in mm6.35 (0.250)8.64 (0.340)3.68PNP POWER (0.145) rad.3.61 (0.142)max.4.08(0.161)rad.TRANSISTOR1 21.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package. (TO-213AA)Pin 1 Base Pin 2 Emitter Case - CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)VCBO Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDX14A | BLX58 | GT400-10E