BDX20 Datasheet. Specs and Replacement

Type Designator: BDX20  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

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BDX20 datasheet

 ..1. Size:132K  comset

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BDX20

BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage -140 V VCEX Collector-Emitter Voltage VBE=1.5 V -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current Continuous -10 A I... See More ⇒

 ..2. Size:209K  inchange semiconductor

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BDX20

isc Silicon PNP Power Transistor BDX20 DESCRIPTION High Current Capability Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

Detailed specifications: BDX13-5, BDX13-6, BDX13-7, BDX14, BDX15, BDX16, BDX18, BDX18N, 2N5551, BDX22, BDX22-4, BDX22-5, BDX22-6, BDX22-7, BDX23, BDX23-4, BDX23-5

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