BDX20 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX20
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
BDX20 Transistor Equivalent Substitute - Cross-Reference Search
BDX20 Datasheet (PDF)
bdx20.pdf
BDX20PNP SILICON TRANSISTORS EPITAXIAL BASELF Large Signal Power AmplificationHigh Current Fast SwitchingThermal Fatigue InspectionABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCBO Collector to Base Voltage -60 VVCEO #Collector-Emitter Voltage -140 VVCEX Collector-Emitter Voltage VBE=1.5 V -160 VVEBO Emitter-Base Voltage -7 VIC Collector Current Continuous -10 AI
bdx20.pdf
isc Silicon PNP Power Transistor BDX20DESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF large signal power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
