BDX20 Datasheet and Replacement
Type Designator: BDX20
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
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BDX20 Datasheet (PDF)
bdx20.pdf

BDX20PNP SILICON TRANSISTORS EPITAXIAL BASELF Large Signal Power AmplificationHigh Current Fast SwitchingThermal Fatigue InspectionABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCBO Collector to Base Voltage -60 VVCEO #Collector-Emitter Voltage -140 VVCEX Collector-Emitter Voltage VBE=1.5 V -160 VVEBO Emitter-Base Voltage -7 VIC Collector Current Continuous -10 AI
bdx20.pdf

isc Silicon PNP Power Transistor BDX20DESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF large signal power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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