All Transistors. BDX35 Datasheet

 

BDX35 Datasheet and Replacement


   Type Designator: BDX35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO126
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BDX35 Datasheet (PDF)

 ..1. Size:53K  philips
 bdx35 bdx36 bdx37 cnv 2.pdf pdf_icon

BDX35

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BDX35; BDX36; BDX37NPN switching transistors1997 Apr 16Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BDX35; BDX36; BDX37FEATURES PINNING High current (max. 5 A)PIN DESCRIPTION Low voltage (

 ..2. Size:211K  inchange semiconductor
 bdx35.pdf pdf_icon

BDX35

isc Silicon NPN Power Transistor BDX35DESCRIPTION Current Capability-I = 5A(DC)HighCDC Current Gain: h = 45-450(Min) @ I = 0.5 AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-current switching in power applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | U2T605 | BCW20 | MRF404 | HBD437T | RN1909 | ZX5T2E6

Keywords - BDX35 transistor datasheet

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