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BDX35 PDF Specs and Replacement


   Type Designator: BDX35
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO126
 

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BDX35 PDF detailed specifications

 ..1. Size:53K  philips
 bdx35 bdx36 bdx37 cnv 2.pdf pdf_icon

BDX35

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors 1997 Apr 16 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 FEATURES PINNING High current (max. 5 A) PIN DESCRIPTION Low voltage (... See More ⇒

 ..2. Size:211K  inchange semiconductor
 bdx35.pdf pdf_icon

BDX35

isc Silicon NPN Power Transistor BDX35 DESCRIPTION Current Capability-I = 5A(DC) High C DC Current Gain h = 45-450(Min) @ I = 0.5 A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-current switching in power applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: BDX33D , BDX33E , BDX34 , BDX34A , BDX34B , BDX34C , BDX34D , BDX34E , 8550 , BDX36 , BDX37 , BDX40 , BDX40-4 , BDX40-5 , BDX40-6 , BDX40-7 , BDX41 .

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