BDX35 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO126
BDX35 Transistor Equivalent Substitute - Cross-Reference Search
BDX35 Datasheet (PDF)
bdx35 bdx36 bdx37 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BDX35; BDX36; BDX37NPN switching transistors1997 Apr 16Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BDX35; BDX36; BDX37FEATURES PINNING High current (max. 5 A)PIN DESCRIPTION Low voltage (
bdx35.pdf
isc Silicon NPN Power Transistor BDX35DESCRIPTION Current Capability-I = 5A(DC)HighCDC Current Gain: h = 45-450(Min) @ I = 0.5 AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-current switching in power applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: D33D26 | 2SB1119 | BLW44
