BDX35 Datasheet. Specs and Replacement

Type Designator: BDX35  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO126

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BDX35 datasheet

 ..1. Size:53K  philips

 bdx35 bdx36 bdx37 cnv 2.pdf pdf_icon

BDX35

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors 1997 Apr 16 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 FEATURES PINNING High current (max. 5 A) PIN DESCRIPTION Low voltage (... See More ⇒

 ..2. Size:211K  inchange semiconductor

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BDX35

isc Silicon NPN Power Transistor BDX35 DESCRIPTION Current Capability-I = 5A(DC) High C DC Current Gain h = 45-450(Min) @ I = 0.5 A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-current switching in power applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: BDX33D, BDX33E, BDX34, BDX34A, BDX34B, BDX34C, BDX34D, BDX34E, 8550, BDX36, BDX37, BDX40, BDX40-4, BDX40-5, BDX40-6, BDX40-7, BDX41

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