All Transistors. BF583 Datasheet

 

BF583 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BF583
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90Mz MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO202

 BF583 Transistor Equivalent Substitute - Cross-Reference Search

   

BF583 Datasheet (PDF)

 ..1. Size:63K  philips
 bf583 bf585 bf587.pdf

BF583 BF583

DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF583; BF585; BF587NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF583; BF585; BF587FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in v

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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