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BF583 Specs and Replacement


   Type Designator: BF583
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 90Mz MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO202
 

 BF583 Substitution

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BF583 datasheet

 ..1. Size:63K  philips
 bf583 bf585 bf587.pdf pdf_icon

BF583

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in v... See More ⇒

Detailed specifications: BF560 , BF562 , BF568 , BF569 , BF569R , BF570 , BF579 , BF579R , A733 , BF585 , BF587 , BF591 , BF593 , BF594 , BF595 , BF595S , BF596 .

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