BF660 Specs and Replacement
Type Designator: BF660
SMD Transistor Code: G8_LE_LEp_LEs
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.11 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
BF660 Substitution
BF660 datasheet
bf660.pdf
PNP Silicon RF Transistor BF 660 For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 660 LEs Q62702-F982 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 mA Emitter current IE 30 Total power dissi... See More ⇒
bf660w.pdf
BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation Pt... See More ⇒
Detailed specifications: BF643 , BF643P , BF643P2 , BF643W , BF643W3 , BF657 , BF658 , BF659 , 431 , BF660R , BF660W , BF666 , BF667 , BF668 , BF679 , BF679M , BF679S .
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