All Transistors. BF660 Datasheet

 

BF660 Datasheet and Replacement


   Type Designator: BF660
   SMD Transistor Code: G8_LE_LEp_LEs
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.11 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
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BF660 Datasheet (PDF)

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BF660

PNP Silicon RF Transistor BF 660 For VHF oscillator applicationsType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BF 660 LEs Q62702-F982 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 30 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 4Collector current IC 25 mAEmitter current IE 30Total power dissi

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BF660

BF 660WPNP Silicon RF Transistor For VHF oscillator applicationsType Marking Ordering Code Pin Configuration PackageBF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 30 VCollector-base voltage VCBO 40Emitter-base voltage VEBO 4Collector current IC 25 mABase current IB 5Total power dissipation Pt

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NJD2873T4G | FZT560 | AFY29 | ET5065 | CH867UPNGP | HN3C67FE | BSX48

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