BF660 Datasheet. Specs and Replacement
Type Designator: BF660 📄📄
SMD Transistor Code: G8_LE_LEp_LEs
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.11 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT23
📄📄 Copy
BF660 Substitution
- BJT ⓘ Cross-Reference Search
BF660 datasheet
PNP Silicon RF Transistor BF 660 For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 660 LEs Q62702-F982 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 mA Emitter current IE 30 Total power dissi... See More ⇒
BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation Pt... See More ⇒
Detailed specifications: BF643, BF643P, BF643P2, BF643W, BF643W3, BF657, BF658, BF659, 431, BF660R, BF660W, BF666, BF667, BF668, BF679, BF679M, BF679S
Keywords - BF660 pdf specs
BF660 cross reference
BF660 equivalent finder
BF660 pdf lookup
BF660 substitution
BF660 replacement
