BF660W Datasheet, Equivalent, Cross Reference Search
Type Designator: BF660W
SMD Transistor Code: LE_LEs
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.11 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
BF660W Transistor Equivalent Substitute - Cross-Reference Search
BF660W Datasheet (PDF)
bf660w.pdf
BF 660WPNP Silicon RF Transistor For VHF oscillator applicationsType Marking Ordering Code Pin Configuration PackageBF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 30 VCollector-base voltage VCBO 40Emitter-base voltage VEBO 4Collector current IC 25 mABase current IB 5Total power dissipation Pt
bf660.pdf
PNP Silicon RF Transistor BF 660 For VHF oscillator applicationsType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BF 660 LEs Q62702-F982 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 30 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 4Collector current IC 25 mAEmitter current IE 30Total power dissi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
