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BF660W Specs and Replacement


   Type Designator: BF660W
   SMD Transistor Code: LE_LEs
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.11 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

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BF660W datasheet

 ..1. Size:59K  siemens
 bf660w.pdf pdf_icon

BF660W

BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation Pt... See More ⇒

 9.1. Size:39K  siemens
 bf660.pdf pdf_icon

BF660W

PNP Silicon RF Transistor BF 660 For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 660 LEs Q62702-F982 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 mA Emitter current IE 30 Total power dissi... See More ⇒

Detailed specifications: BF643P2 , BF643W , BF643W3 , BF657 , BF658 , BF659 , BF660 , BF660R , TIP32C , BF666 , BF667 , BF668 , BF679 , BF679M , BF679S , BF679T , BF680 .

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