BF660W Datasheet. Specs and Replacement

Type Designator: BF660W  📄📄 

SMD Transistor Code: LE_LEs

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.11 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

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BF660W datasheet

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BF660W

BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation Pt... See More ⇒

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BF660W

PNP Silicon RF Transistor BF 660 For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 660 LEs Q62702-F982 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 mA Emitter current IE 30 Total power dissi... See More ⇒

Detailed specifications: BF643P2, BF643W, BF643W3, BF657, BF658, BF659, BF660, BF660R, TIP32C, BF666, BF667, BF668, BF679, BF679M, BF679S, BF679T, BF680

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