All Transistors. BF660W Datasheet

 

BF660W Datasheet and Replacement


   Type Designator: BF660W
   SMD Transistor Code: LE_LEs
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.11 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

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BF660W Datasheet (PDF)

 ..1. Size:59K  siemens
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BF660W

BF 660WPNP Silicon RF Transistor For VHF oscillator applicationsType Marking Ordering Code Pin Configuration PackageBF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 30 VCollector-base voltage VCBO 40Emitter-base voltage VEBO 4Collector current IC 25 mABase current IB 5Total power dissipation Pt

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BF660W

PNP Silicon RF Transistor BF 660 For VHF oscillator applicationsType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BF 660 LEs Q62702-F982 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 30 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 4Collector current IC 25 mAEmitter current IE 30Total power dissi

Datasheet: BF643P2 , BF643W , BF643W3 , BF657 , BF658 , BF659 , BF660 , BF660R , 2N2907 , BF666 , BF667 , BF668 , BF679 , BF679M , BF679S , BF679T , BF680 .

History: KTX402U | 2SB89H | BF679S | BF668 | CSA1220AO | BF550

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