BF747 Datasheet. Specs and Replacement
Type Designator: BF747 📄📄
SMD Transistor Code: E15
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
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BF747 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. High current gain Good thermal stability.... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. High current gain Good thermal stability.... See More ⇒
Detailed specifications: BF722, BF722T1, BF722T3, BF723, BF723T1, BF723T3, BF739, BF740, A940, BF757, BF757BA, BF757EA, BF758, BF758BA, BF758EA, BF759, BF759BA
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BJT Parameters and How They Relate
History: 2SC473 | 2SC4549 | 2SC4707 | KRC282M | NB123F | NB121HH | BF759EA
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