BF819 Datasheet. Specs and Replacement

Type Designator: BF819  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO202

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BF819 datasheet

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BF819

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF819 NPN high-voltage transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistor BF819 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 250 V). 1 emitter 2 collector, co... See More ⇒

Detailed specifications: BF780, BF787, BF788, BF789, BF790, BF791, BF792, BF799, BC549, BF819A, BF820, BF820S, BF821, BF821S, BF822, BF822S, BF823

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