BF858EA Datasheet, Equivalent, Cross Reference Search
Type Designator: BF858EA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 270 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO251
BF858EA Transistor Equivalent Substitute - Cross-Reference Search
BF858EA Datasheet (PDF)
9.1. Size:63K philips
bf857 bf858 bf859.pdf
bf857 bf858 bf859.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF857; BF858; BF859NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF857; BF858; BF859DESCRIPTIONNPN transistors in a TO-202 plastic package.handbook, halfpageAn A-version
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
