All Transistors. BF858EA Datasheet

 

BF858EA Datasheet and Replacement


   Type Designator: BF858EA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 270 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251
 

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BF858EA Datasheet (PDF)

 9.1. Size:63K  philips
 bf857 bf858 bf859.pdf pdf_icon

BF858EA

DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF857; BF858; BF859NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF857; BF858; BF859DESCRIPTIONNPN transistors in a TO-202 plastic package.handbook, halfpageAn A-version

Datasheet: BF848 , BF850 , BF857 , BF857A , BF857BA , BF857EA , BF858 , BF858A , 2SC5200 , BF859 , BF859A , BF859BA , BF859EA , BF860 , BF869 , BF869A , BF869BA .

History: CV7342A-0 | MQ3639 | 2SD1895 | CZD13003 | BFR182W | BDY34 | BU922

Keywords - BF858EA transistor datasheet

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