BF858EA Datasheet. Specs and Replacement

Type Designator: BF858EA  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.8 W

Maximum Collector-Base Voltage |Vcb|: 270 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 4.2 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO251

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BF858EA datasheet

 9.1. Size:63K  philips

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BF858EA

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DESCRIPTION NPN transistors in a TO-202 plastic package. handbook, halfpage An A-version... See More ⇒

Detailed specifications: BF848, BF850, BF857, BF857A, BF857BA, BF857EA, BF858, BF858A, BD222, BF859, BF859A, BF859BA, BF859EA, BF860, BF869, BF869A, BF869BA

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