BFR53R Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR53R
SMD Transistor Code: N4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
BFR53R Transistor Equivalent Substitute - Cross-Reference Search
BFR53R Datasheet (PDF)
9.1. Size:75K philips
bfr53 2.pdf
bfr53 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFR53NPN 2 GHz wideband transistor1997 Oct 28Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz wideband transistor BFR53FEATURES PINNINGfpage 3 Very low intermodulation distortionPIN DESCRIPTION Very high power gain.1 base2 emi
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
