All Transistors. BFX30 Datasheet

 

BFX30 Datasheet and Replacement


   Type Designator: BFX30
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5
 

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BFX30 Datasheet (PDF)

 ..1. Size:56K  philips
 bfx30 cnv 2.pdf pdf_icon

BFX30

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX30PNP switching transistor1997 Apr 16Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistor BFX30FEATURES PINNING High current (max.600 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

 ..2. Size:132K  cdil
 bfx30.pdf pdf_icon

BFX30

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR BFX30TO-39Metal Can PackageINTENDED FOR SWITCHING APPLICATIONS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 65 VVCBOCollector Base Voltage 65 VVEBOEmitter Base Voltage 5.0 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BFU530XR | BFX48DCSM

Keywords - BFX30 transistor datasheet

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