BFX30 Datasheet. Specs and Replacement

Type Designator: BFX30  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

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BFX30 datasheet

 ..1. Size:56K  philips

 bfx30 cnv 2.pdf pdf_icon

BFX30

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor 1997 Apr 16 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistor BFX30 FEATURES PINNING High current (max.600 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS... See More ⇒

 ..2. Size:132K  cdil

 bfx30.pdf pdf_icon

BFX30

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR BFX30 TO-39 Metal Can Package INTENDED FOR SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 65 V VCBO Collector Base Voltage 65 V VEBO Emitter Base Voltage 5.0 V ... See More ⇒

Detailed specifications: BFX16, BFX17, BFX17A, BFX18, BFX19, BFX20, BFX21, BFX29, D209L, BFX31, BFX32, BFX33, BFX34, BFX34SM, BFX34T, BFX35, BFX36

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