BSX32 Datasheet. Specs and Replacement

Type Designator: BSX32  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO39

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BSX32 datasheet

 ..1. Size:51K  philips

 bsx32 cnv 2.pdf pdf_icon

BSX32

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX32 NPN switching transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor BSX32 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS ... See More ⇒

 ..2. Size:79K  st

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BSX32

BSX32 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX32 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is designed for high voltage, high current switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 65 V VCEO Collector-emitter Voltage (IB = 0) 40 V VEBO Emit... See More ⇒

Detailed specifications: BSX23, BSX24, BSX25, BSX26, BSX27, BSX28, BSX29, BSX30, D882P, BSX33, BSX35, BSX36, BSX36CSM, BSX38, BSX38A, BSX38B, BSX39

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