All Transistors. BSX32 Datasheet

 

BSX32 Datasheet and Replacement


   Type Designator: BSX32
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO39
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BSX32 Datasheet (PDF)

 ..1. Size:51K  philips
 bsx32 cnv 2.pdf pdf_icon

BSX32

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX32NPN switching transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BSX32FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 baseAPPLICATIONS

 ..2. Size:79K  st
 bsx32.pdf pdf_icon

BSX32

BSX32HIGH-VOLTAGE, HIGH-CURRENT SWITCHDESCRIPTIONThe BSX32 is a silicon planar epitaxial NPNtransistor in Jedec TO-39 metal case. It is designedfor high voltage, high current switching applications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-base Voltage (IE =0) 65 VVCEO Collector-emitter Voltage (IB = 0) 40 VVEBO Emit

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | DRC9143X | BDY12B | BF392W1 | 2SD1007HR | ED1602D | SFE245

Keywords - BSX32 transistor datasheet

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