BSX32 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSX32
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO39
BSX32 Transistor Equivalent Substitute - Cross-Reference Search
BSX32 Datasheet (PDF)
bsx32 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX32NPN switching transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BSX32FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 baseAPPLICATIONS
bsx32.pdf
BSX32HIGH-VOLTAGE, HIGH-CURRENT SWITCHDESCRIPTIONThe BSX32 is a silicon planar epitaxial NPNtransistor in Jedec TO-39 metal case. It is designedfor high voltage, high current switching applications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-base Voltage (IE =0) 65 VVCEO Collector-emitter Voltage (IB = 0) 40 VVEBO Emit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
