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2N3209DCSM Specs and Replacement


   Type Designator: 2N3209DCSM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: LCC2

 2N3209DCSM Transistor Equivalent Substitute - Cross-Reference Search

   

2N3209DCSM detailed specifications

 8.1. Size:113K  st
 2n2894 2n3209.pdf pdf_icon

2N3209DCSM

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 8.2. Size:24K  semelab
 2n3209x.pdf pdf_icon

2N3209DCSM

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI... See More ⇒

 8.3. Size:25K  semelab
 2n3209xcsm.pdf pdf_icon

2N3209DCSM

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005) 1.40 (0.055) PA... See More ⇒

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Detailed specifications: 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM , 8050 , 2N3209L , 2N321 , 2N3210 , 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 .

History: 2N3209 | MUN5130DW1T1G

Keywords - 2N3209DCSM transistor specs

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