All Transistors. 2N3209DCSM Datasheet

 

2N3209DCSM Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3209DCSM

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: LCC2

2N3209DCSM Transistor Equivalent Substitute - Cross-Reference Search

 

2N3209DCSM Datasheet (PDF)

 8.1. Size:113K  st
2n2894 2n3209.pdf

2N3209DCSM
2N3209DCSM

 8.2. Size:25K  semelab
2n3209xcsm.pdf

2N3209DCSM
2N3209DCSM

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PA

 8.3. Size:24K  semelab
2n3209x.pdf

2N3209DCSM
2N3209DCSM

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI

Datasheet: 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM , 2SD313 , 2N3209L , 2N321 , 2N3210 , 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 .

 

 
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