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BU100 PDF Specs and Replacement


   Type Designator: BU100
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

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BU100 PDF detailed specifications

 ..1. Size:206K  inchange semiconductor
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BU100

isc Silicon NPN Power Transistor BU100 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 3.3V(Max.)@ I = 8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching a... See More ⇒

Detailed specifications: BT3999 , BT3999T , BT4260 , BT4261 , BT929 , BT929T , BT930 , BT930T , 2SC4793 , BU1008ADF , BU1008AF , BU100A , BU102 , BU103 , BU103A , BU104 , BU104D .

Keywords - BU100 pdf specs

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