All Transistors. BU1008AF Datasheet

 

BU1008AF Datasheet and Replacement


   Type Designator: BU1008AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO220F
 

 BU1008AF Substitution

   - BJT ⓘ Cross-Reference Search

   

BU1008AF Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
 bu100.pdf pdf_icon

BU1008AF

isc Silicon NPN Power Transistor BU100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 3.3V(Max.)@ I = 8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of CTVreceivers and high voltage,fast switching a

Datasheet: BT4260 , BT4261 , BT929 , BT929T , BT930 , BT930T , BU100 , BU1008ADF , 2N2222A , BU100A , BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P .

Keywords - BU1008AF transistor datasheet

 BU1008AF cross reference
 BU1008AF equivalent finder
 BU1008AF lookup
 BU1008AF substitution
 BU1008AF replacement

 

 
Back to Top

 


 
.