BU1008AF PDF Specs and Replacement
Type Designator: BU1008AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO220F
BU1008AF Substitution
BU1008AF PDF detailed specifications
bu100.pdf
isc Silicon NPN Power Transistor BU100 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 3.3V(Max.)@ I = 8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching a... See More ⇒
Detailed specifications: BT4260 , BT4261 , BT929 , BT929T , BT930 , BT930T , BU100 , BU1008ADF , 2SC1815 , BU100A , BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P .
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